Технические параметры
- Tolerance: ±5%
- Technology: TransZorb®
- Leakage current: 10µA
- Breakdown voltage: 10V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 8.55V
- Semiconductor structure: unidirectional
- Max. forward impulse current: 41A
- Features of semiconductor devices: glass passivated
- Mounting: SMD
- Case: SMB
- Power dissipation: 600W