Технические параметры
- Drain current: 48A
- Gate charge: 76nC
- Channel kind: enhanced
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 650V
- Pulsed drain current: 70A
- Mounting: THT
- Case: TO3PF
- Type of transistor: N-MOSFET
- On-State Resistance: 65mΩ
- Power dissipation: 70W