Технические параметры
- Drain current: 4.9A
- #Promotion: vishay_201906
- Gate charge: 8.4nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±10V
- Drain-source voltage: 60V
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 280mΩ
- Power dissipation: 25W