Технические параметры
- Topology: booster
- Technology: HiPerDynFRED
- Drain current: 32A
- Gate charge: 150nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±20V
- Drain-source voltage: 600V
- Semiconductor structure: diode/transistor
- Features of semiconductor devices: super junction coolmos
- Mounting: THT
- Case: ISOPLUS i4-pac™
- Type of transistor: N-MOSFET
- On-State Resistance: 0.045Ω