Технические параметры
- Drain current: 8.5A
- #Promotion: vishay_201906
- Gate charge: 68nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±20V
- Drain-source voltage: 250V
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 0.28Ω
- Power dissipation: 125W