Технические параметры
- Power: 880mW
- Topology: single transistor
- Technology: HITFET®
- Output current: 550mA
- Output voltage: 60V
- Supply voltage: 4.5...60V DC
- Operating temperature: -40...150°C
- Turn-on time: 2µs
- Turn-off time: 2µs
- Kind of output: N-Channel
- Number of channels: 2
- Kind of integrated circuit: low-side switch
- Mounting: SMD
- Case: PG-DSO-8
- On-State Resistance: 480mΩ
- Type of integrated circuit: power switch