Технические параметры
- Technology: Trench
- Application: SMPS
- Collector current: 99A
- Module type: IGBT
- Electrical mounting: screw
- Mechanical mounting: screw
- Gate - emitter voltage: ±30V
- Off state voltage max.: 1.2kV
- Semiconductor structure: single transistor
- Pulsed collector current: 450A
- Case: SOT227B