Технические параметры
- Topology: IGBT half-bridge x3
- Collector current: 2.4kA
- Module type: IGBT
- Electrical mounting: screw
- Mechanical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.7kV
- Semiconductor structure: transistor/transistor
- Pulsed collector current: 4.8kA
- Case: HIPAK