Технические параметры
- Topology: IGBT x2
- Technology: SPT+
- Collector current: 500A
- Module type: IGBT
- Electrical mounting: screw
- Mechanical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 3.3kV
- Semiconductor structure: transistor/transistor
- Pulsed collector current: 1kA
- Case: HIPAK