Технические параметры
- Drain current: -3.5A
- #Promotion: vishay_201906
- Gate charge: 13.6nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -40V
- Mounting: SMD
- Case: SOT23
- Type of transistor: P-MOSFET
- On-State Resistance: 0.108Ω
- Power dissipation: 1.6W