Технические параметры
- Drain current: 25A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 200V
- Pulsed drain current: 160A
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 45mΩ
- Power dissipation: 160W