Технические параметры
- Technology: MDmesh™
- Drain current: 3.1A
- Gate charge: 18nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 650V
- Pulsed drain current: 20A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 1Ω
- Power dissipation: 96W