Технические параметры
- Drain current: 7.6A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 500V
- Pulsed drain current: 48A
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 380mΩ
- Power dissipation: 35W