Технические параметры
- Technology: Strong IRFET™
- Drain current: 68A
- Gate charge: 203nC
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±20V
- Drain-source voltage: 250V
- Mounting: THT
- Case: TO247AC
- Type of transistor: N-MOSFET
- On-State Resistance: 12mΩ
- Power dissipation: 313W