Технические параметры
- Technology: BiMOSFET™
- Collector current: 21A
- Collector-emitter voltage: 1.7kV
- Gate charge: 188nC
- Turn-on time: 33ns
- Turn-off time: 308ns
- Kind of package: tube
- Gate - emitter voltage: ±20V
- Pulsed collector current: 265A
- Features of semiconductor devices: high voltage
- Mounting: THT
- Case: TO247-3
- Type of transistor: IGBT
- Power dissipation: 357W